?004 fairchild semiconductor corporation j une 2004 RMWD24001 rev. d RMWD24001 RMWD24001 21?6.5 ghz driver amplifier mmic general description the RMWD24001 is a 4-stage gaas mmic amplifier designed as a 21 to 26.5 ghz driver amplifier for use in point to point and point to multi-point radios, and various communications applications. in conjunction with other fairchild semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 and 26 ghz transmit/receive chipset. the RMWD24001 utilizes our 0.25? power phemt process and is sufficiently versatile to serve in a variety of driver amplifier applications. features ? mil substrate small-signal gain 23db (typ.) 1db compressed pout 17dbm (typ.) voltage detector included to monitor pout chip size 2.85mm x 1.2mm absolute ratings symbol parameter ratings units vd positive dc voltage (+4v typical) +6 v vg negative dc voltage -2 v vdg simultaneous (vd?g) 8 v i d p ositive dc current 345 ma p in rf input power (from 50 ? source) +8 dbm t c operating baseplate temperature -30 to +85 ? t stg storage temperature range -55 to +125 ? r jc thermal resistance (channel to backside) 42 ?/w device
?004 fairchild semiconductor corporation RMWD24001 rev. d RMWD24001 electrical characteristics (at 25?), 50 ? system, vd = +4v, quiescent current idq = 240 ma note: 1: typical range of negative gate voltage is -0.7 to -0.1v to set typical idq of 240 ma p arameter min typ max units f requency range 21 26.5 ghz gate supply voltage 1 (vg) 0.4 v gain small signal at pin = -12 dbm 20 23 db gainvariation vs frequency 3 db gain at 1 dbm compression 22 db po w er output at p1 db (pin = -6 dbm) 13 17 db drain current at pin = -12 dbm 240 dbm drain current at 1db compression 265 ma input return loss (pin = -12 dbm) 10 db output return loss (pin = -12 dbm) 12 db oip3 tbd dbm noise figure tbd db detector voltage tbd v
?004 fairchild semiconductor corporation RMWD24001 rev. d RMWD24001 application information caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325? for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf and dc ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. figure 1. functional block diagram drain supply vd1 drain supply vd3 drain supply vd4 drain supply vd2 mmic chip rf out rf in ground (back of the chip) note: detector delivers 0.1v dc into 3k ? load resistor for > +7dbm output power. if output level detection is not desired, do not make connection to detector bond pad. gate supply vg1&4 gate supply vg2&3 output power detector voltage vdet*
?004 fairchild semiconductor corporation RMWD24001 rev. d RMWD24001 0.0 0.0 0.0 0.0 2.85 2.85 1.2 1.2 0.768 0.61 35 0.459 0.820 0.66 55 0.511 0.921 2.119 0.24 85 1.1215 1.642 2.35 2 dimensions in mm figure 2. chip layout and bond pad locations (chip size is 2.85mm x 1.2mm. back of chip is rf and dc ground) figure 3. recommended application schematic circuit diagram rf out rf in ground (back of chip ) 100pf l l l 100pf 100pf 10,000pf ll 100pf 100pf l l l l 100pf l l r = 3k ohm s 10,00 0pf ll l l mmic chip gate supply vg output power detector voltage vdet drain supply vd = +4v l = bond wire inductance
?004 fairchild semiconductor corporation RMWD24001 rev. d RMWD24001 figure 4. recommended assembly diagram 100pf 10,000pf 10 0pf 10 0pf 100pf 10 0pf 10,00 0pf 3k ? 10 0pf 5 mil thick alumina 50 ? rf input rf output l < 0.015" (4 places) vd (positive) die-attach 80au/20sn 2 mil gap 5 mil thick alumina 50 ? detector voltage vg (negative) note: use 0.003" by 0.0005" gold ribbon for bonding. rf input and output bonds should be less than 0.015" long with stress relief. recommended procedure for biasing and operation caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier chip. the following sequence of steps must be followed to properly test the amplifier: step 1: turn off rf input power. step 2: connect the dc supply grounds to the grounds of the chip carrier. slowly apply negative gate bias supply voltage of -1.5v to vg. step 3: slowly apply positive drain bias supply voltage of +5v to vd. step 4: adjust gate bias voltage to set the quiescent current of idq = 240ma. step 5: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. step 6: follow turn-off sequence of: (i) turn off rf input power, (ii) turn down and off drain voltage (vd), (iii) turn down and off gate bias voltage (vg).
?004 fairchild semiconductor corporation RMWD24001 rev. d RMWD24001 0 2 4 6 8 10 12 14 16 18 20 22 24 26 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 frequency (ghz) frequency (ghz) -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 s 11 s 21 s 22 RMWD24001 26 ghz driver typical output power at 1 db gain compression measured on-wafer i dq = 240ma, v dd = 4v RMWD24001 26 ghz driver amplifier typical on-wafer performance i dq = 210ma, v dd = 4v 10 12 14 16 18 20 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 ooutput power (dbm) s21 mag (db) s11 and s22 mag (db) output power at 1db compression typical characteristics
?004 fairchild semiconductor corporation RMWD24001 rev. d RMWD24001 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 21 ghz pout 21 ghz gain 26.5 ghz pout 26.5 ghz gain 24 ghz pout 24 ghz gain 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 510152 025 3035 4045 50 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 s 21 s 11 s 22 frequency (ghz) input power (dbm) RMWD24001 driver amplifer typical wideband s-parameters measurements include 50 ? test fixture, i dq = 240ma, v dd = 4v RMWD24001 typical power saturation curves measurements include 50 ? test figure, i dq = 240ma, v dd = 4v ooutput power (dbm) s21 mag (db) s11 and s22 mag (db) typical characteristics (continued)
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i11 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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